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| PD - 91681A IRG4PSC71U INSULATED GATE BIPOLAR TRANSISTOR Features * UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations * Industry-benchmark Super-247 package with higher power handling capability compared to same footprint TO-247 * Creepage distance increased to 5.35mm C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.67V @VGE = 15V, IC = 60A n-channel Benefits * Generation 4 IGBT's offer highest efficiencies available * Maximum power density, twice the power handling of the TO-247, less space than TO-264 * IGBTs optimized for specific application conditions * Cost and space saving in designs that require multiple, paralleled IGBTs SUPER - 247 Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 600 85 60 200 200 20 180 350 140 -55 to + 150 300 (0.063 in. (1.6mm from case ) Units V A V mJ W C Thermal Resistance\ Mechanical Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Recommended Clip Force Weight Min. --- --- --- 20.0(2.0) --- Typ. --- 0.24 --- --- 6 (0.21) Max. 0.36 --- 38 --- --- Units C/W N (kgf) g (oz) www.irf.com 1 5/12/99 IRG4PSC71U Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 --- Emitter-to-Collector Breakdown Voltage 18 --- V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage --- 0.45 --- 1.67 VCE(ON) Collector-to-Emitter Saturation Voltage --- 1.95 --- 1.71 VGE(th) Gate Threshold Voltage 3.0 --- VGE(th)/TJ Temperature Coeff. of Threshold Voltage --- -10 gfe Forward Transconductance 47 70 --- --- ICES Zero Gate Voltage Collector Current --- --- --- --- IGES Gate-to-Emitter Leakage Current --- --- Max. Units Conditions --- V VGE = 0V, IC = 250A --- V VGE = 0V, IC = 1.0A --- V/C VGE = 0V, IC = 5.0mA 2.0 IC = 60A VGE = 15V --- IC = 100A See Fig.2, 5 V --- IC = 60A , TJ = 150C 6.0 VCE = VGE, IC = 250A --- mV/C VCE = VGE, IC = 1.0mA --- S VCE = 50V, IC = 60A 500 VGE = 0V, VCE = 600V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 5.0 mA VGE = 0V, VCE = 600V, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. 340 44 160 34 50 56 86 0.42 1.99 2.41 30 49 129 175 4.5 13 7500 720 93 Max. Units Conditions 520 IC = 60A 66 nC VCC = 400V See Fig. 8 240 VGE = 15V --- --- TJ = 25C ns 84 IC = 60A, VCC = 480V 130 VGE = 15V, RG = 5.0 --- Energy losses include "tail" --- mJ See Fig. 10, 11, 13, 14 3.2 --- TJ = 150C, --- IC = 60A, VCC = 480V ns --- VGE = 15V, RG = 5.0 --- Energy losses include "tail" --- mJ See Fig. 13, 14 --- nH Measured 5mm from package --- VGE = 0V --- pF VCC = 30V See Fig. 7 --- = 1.0MHz Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Current limited by the package, (Die current = 100A) VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 5.0, (See fig. 13a) Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4PSC71U 150 For both: Triangular wave: 120 L oad C urrent (A ) Duty cycle: 50% T J = 125C T sink= 90C Gate drive as specified Power Dissipation = 58W Clamp voltage: 80% of rated 90 Square wave: 60% of rated voltage 60 30 Ideal diodes 0 0.1 1 10 A 100 f, F re q ue n cy (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 1000 1000 I C , Collector Current (A) Ic , Collector-to-Emitter Current (A) TJ = 25 C TJ = 150 C I C , Collector-to-Emitter Current (A) TJ = 150 C 100 100 TJ = 25 C 10 10 1 1.0 V GE = 15V 80s PULSE WIDTH 1.5 2.0 2.5 3.0 3.5 1 5 6 7 V CC = 50V 5s PULSE WIDTH 8 9 10 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4PSC71U 100 3.0 L IM IT E D B Y P A C K A G E 80 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current (A) VGE = 15V 80 us PULSE WIDTH IC = 120A 60 2.0 40 IC = 60A IC = 30A 20 V G E = 1 5V 0 25 50 75 100 125 A 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , C a s e Te m p e ra tu re (C ) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (ZthJC) D = 0 .50 0.1 0 .20 0 .1 0 0.05 0.0 2 0.01 P DM SIN G L E PU L SE (THE R M A L R ES PO N SE ) t1 t2 Notes: 1. Duty factor D = t / t 12 2. Peak TJ = PDM x Z thJC + TC 0.01 0.0001 A 100 0.001 0.01 0.1 1 10 t 1 , R e ctang ular Pulse D uratio n (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PSC71U 14000 12000 10000 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 60A 16 C, Capacitance (pF) Cies 8000 6000 12 Coes 4000 8 2000 0 1 Cres 4 10 100 0 0 100 200 300 400 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 8.0 100 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C 7.0 I C = 60A 6.0 RG = 5.0Ohm VGE = 15V VCC = 480V IC = 120 A 10 IC = 60 A IC = 30 A 1 5.0 4.0 3.0 2.0 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance ( ) TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4PSC71U 14 Total Switching Losses (mJ) 10 I C , Collector Current (A) RG TJ 12 VCC VGE = 5.0Ohm = 150 C = 480V = 15V 1000 VGE = 20V T J = 125 oC 100 8 6 10 4 2 SAFE OPERATING AREA 0 20 40 60 80 100 120 1 1 10 100 1000 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4PSC71U L 50V 1 00 0V VC * D .U .T. RL = 0 - 480V 480V 4 X IC@25C 480F 960V * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V * Driver same type as D.U.T., VC = 480V D .U .T. VC Fig. 14a - Switching Loss Test Circuit 9 0% 1 0% 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 10 % IC 5% t d (o n ) tr E on E ts = ( Eo n +E o ff ) tf t=5 s E o ff www.irf.com 7 IRG4PSC71U Case Outline and Dimensions -- Super-247 Dimensions are shown in millimeters WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 5/99 8 www.irf.com |
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